Thermochemical hole burning on a triethylammonium bis-7,7,8,8-tetracyanoquinodimethane charge-transfer complex using single-walled carbon nanotube scanning tunneling microscopy tips

Hailin Peng; Zhuo Chen; Lianming Tong; Xuechun Yu; Chunbo Ran; Zhongfan Liu

doi:10.1021/jp0462409

Thermochemical hole burning on a triethylammonium bis-7,7,8,8-tetracyanoquinodimethane charge-transfer complex using single-walled carbon nanotube scanning tunneling microscopy tips

J Phys Chem B. 2005 Mar 3;109(8):3526-30. doi: 10.1021/jp0462409.

Authors

Hailin Peng¹, Zhuo Chen, Lianming Tong, Xuechun Yu, Chunbo Ran, Zhongfan Liu

Affiliation

¹ Center for Nanoscale Science and Technology, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China.

PMID: 16851389
DOI: 10.1021/jp0462409

Abstract

The present article describes a thermochemical hole burning (THB) effect on a charge-transfer complex triethylammonium bis-7,7,8,8-tetracyanoquinodimethane (TEA(TCNQ)(2)) using single-walled carbon nanotube (SWNT) scanning tunneling microscopy (STM) tips, which demonstrates the possibility of optimizing the THB storage materials and the writing tips for ultrahigh-density data storage. TEA(TCNQ)(2) is proven to be a high-performance THB storage material, which gives deeper holes and larger hole depth-to-diameter ratio as compared to the previous materials dipropylammonium bis-7,7,8,8-tetracyanoquinodimethane and N-methyl-N-ethylmorpholinium bis-7,7,8,8-tetracyanoquinodimethane. Instead of conventional Pt/Ir STM tips, SWNT tips made by a unique chemical assembly technique we developed have been shown to be excellent writing tips for greatly decreasing the hole sizes and increasing the storage density. Possible reasons for the improvements on the storage performance were discussed.