Detection of spin polarized carrier in silicon nanowire with single crystal MnSi as magnetic contacts

Yung-Chen Lin; Yu Chen; Alexandros Shailos; Yu Huang

doi:10.1021/nl101477q

Detection of spin polarized carrier in silicon nanowire with single crystal MnSi as magnetic contacts

Nano Lett. 2010 Jun 9;10(6):2281-7. doi: 10.1021/nl101477q.

Authors

Yung-Chen Lin¹, Yu Chen, Alexandros Shailos, Yu Huang

Affiliation

¹ Department of Materials Science and Engineering, University of California, Los Angeles, California, USA.

PMID: 20499889
DOI: 10.1021/nl101477q

Abstract

We report the formation of single crystal MnSi nanowires, MnSi/Si/MnSi nanowire heterostructures, to study the spin transport in silicon nanostructure. Scanning electron microscopy studies show that silicon nanowires can be converted into single crystal MnSi nanowires through controlled solid-state reaction. High-resolution transmission electron microscope studies show that MnSi/Si/MnSi heterostructures have clean, atomically sharp interfaces with an epitaxial relationship of Si[311]//MnSi[120] and Si(345)//MnSi(214). Magnetoresistance (MR) studies show that the single crystal MnSi nanowire exhibits metallic behavior with paramagnetic to ferromagnetic transition temperature of 29.7 K and a negative MR up to 1.8% at low temperature. Furthermore, using single crystal MnSi/p-Si/MnSi nanowire heterostructures, we have studied carrier tunneling via the Schottky barrier and spin polarized carrier transport in the silicon nanodevices.