Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction

Adv Mater. 2014 Jul 16;26(27):4711-6. doi: 10.1002/adma.201305351. Epub 2014 May 15.

Abstract

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

Keywords: PTCDI; ZnO; interfacial electronic structure; organic semiconductor; surface defects.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Electron Transport
  • Electrons*
  • Imides / chemistry*
  • Models, Molecular
  • Molecular Conformation
  • Perylene / analogs & derivatives*
  • Perylene / chemistry
  • Semiconductors*
  • Surface Properties
  • Zinc Oxide / chemistry*

Substances

  • Imides
  • perylenetetracarboxylic diimide
  • Perylene
  • Zinc Oxide