Hybridization-Induced Carrier Localization at the C60 /ZnO Interface

Leah L Kelly; David A Racke; Hyungchul Kim; Paul Ndione; Ajaya K Sigdel; Joseph J Berry; Samuel Graham; Dennis Nordlund; Oliver L A Monti

doi:10.1002/adma.201503694

Hybridization-Induced Carrier Localization at the C60 /ZnO Interface

Adv Mater. 2016 May;28(20):3960-5. doi: 10.1002/adma.201503694. Epub 2015 Nov 24.

Authors

Leah L Kelly¹, David A Racke¹, Hyungchul Kim², Paul Ndione³, Ajaya K Sigdel³, Joseph J Berry³, Samuel Graham², Dennis Nordlund⁴, Oliver L A Monti^{1

5}

Affiliations

¹ Department of Chemistry and Biochemistry, University of Arizona, 1306 E. University Blvd., Tucson, AZ, 85721, USA.
² School of Mechanical Engineering and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
³ National Renewable Energy Laboratory, National Center for Photovoltaics, Golden, CO, 80401, USA.
⁴ Stanford Linear Accelerator Campus, Stanford Synchrotron Laboratory, Menlo Park, CA, 94025, USA.
⁵ Department of Physics, University of Arizona, 118 E. Fourth St., Tucson, AZ, 85721, USA.

PMID: 26596518
DOI: 10.1002/adma.201503694

Abstract

Electronic coupling and ground-state charge transfer at the C60 /ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

Keywords: charge transfer; hybrid organic/inorganic interfaces; hybridization; resonant photoemission spectroscopy; ultrafast carrier dynamics.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.