Defect Engineering of Bismuth Oxyiodide by IO3- Doping for Increasing Charge Transport in Photocatalysis

Yongchao Huang; Haibo Li; Wenjie Fan; Fengyi Zhao; Weitao Qiu; Hongbing Ji; Yexiang Tong

doi:10.1021/acsami.6b10653

Defect Engineering of Bismuth Oxyiodide by IO₃^- Doping for Increasing Charge Transport in Photocatalysis

ACS Appl Mater Interfaces. 2016 Oct 19;8(41):27859-27867. doi: 10.1021/acsami.6b10653. Epub 2016 Oct 7.

Authors

Yongchao Huang¹, Haibo Li¹, Wenjie Fan¹, Fengyi Zhao¹, Weitao Qiu¹, Hongbing Ji¹, Yexiang Tong¹

Affiliation

¹ MOE of the Key Laboratory of Bioinorganic and Synthetic Chemistry, KLGHEI of Environment and Energy Chemistry, The Key Lab of Low-carbon Chem & Energy Conservation of Guandong Province, School of Chemistry, Sun Yat-Sen University , 135 Xingang West Road, Guangzhou 510275, China.

PMID: 27696814
DOI: 10.1021/acsami.6b10653

Abstract

Defect engineering is regarded as one of the most active projects to monitor the chemical and physical properties of materials, which is expected to increase the photocatalytic activities of the materials. Herein, oxygen vacancies and IO₃^- doping are introduced into BiOI nanosheets via adding NaH₂PO₂, which can impact the charge carrier dynamics of BiOI photocatalysts, such as its excitation, separation, trap, and transfer. These oxygen-deficient BiOI nanosheets display attractive photocatalytic activities of gaseous formaldehyde degradation and methyl orange under visible light irradiation, which are 5 and 3.5 times higher than the BiOI samples, respectively. Moreover, the comodified BiOI also displayed superior cycling stability and can be used for practical application. This work not only develops an effective strategy for fabricating oxygen vacancies but also offers deep insight into the impact of surface defects in enhancing photocatalysis.

Keywords: IO3− doping; bismuth oxyhalide; charge transport; oxygen vacancy; photocatalysis.