Enhancement in external quantum efficiency of light-emitting diode based on colloidal silicon nanocrystals

Huilian Hao; Yue Zhao; Tianliang Song; Xu Wang; Changwang Li; Wenyao Li; Wenzhong Shen

doi:10.1088/1361-6528/ac2ac1

Enhancement in external quantum efficiency of light-emitting diode based on colloidal silicon nanocrystals

Nanotechnology. 2021 Oct 18;32(50). doi: 10.1088/1361-6528/ac2ac1.

Authors

Huilian Hao¹, Yue Zhao¹, Tianliang Song¹, Xu Wang¹, Changwang Li¹, Wenyao Li¹, Wenzhong Shen²

Affiliations

¹ College of Material Engineering, Shanghai University of Engineering Science, 333 Long Teng Road, Shanghai 201620, People's Republic of China.
² Institute of Solar Energy, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240, People's Republic of China.

PMID: 34584021
DOI: 10.1088/1361-6528/ac2ac1

Abstract

Herein, we report an enhanced red emission from colloidal silicon nanocrystals (c-Si NCs) solution-processed light-emitting diode. c-Si NCs were synthesized by facile femtosecond laser ablation. Based on the structural characterization and opto-electrics properties analysis, both photoluminescence and electroluminescence arise from the radiative recombination of carriers due to quantum confined effect. The optical power density and highest external quantum efficiency have been obtained to be 0.79 mW cm^-2and ∼6.6%, respectively. These results indicate that Si NCs are very attractive as a potential optical source for future integrated chips.

Keywords: charge transport; colloidal silicon nanocrystals; electroluminescence; light-emitting diode.