Impedance spectroscopy of Sb2Se3 photovoltaics consisting of (Sb4Se6)n nanoribbons under light illumination

Jaemin Park; Thomas P Shalvey; Thomas Moehl; Kyoohee Woo; Jonathan D Major; S David Tilley; Wooseok Yang

doi:10.1039/d3nr04082h

Impedance spectroscopy of Sb₂Se₃ photovoltaics consisting of (Sb₄Se₆)_n nanoribbons under light illumination

Nanoscale. 2023 Dec 14;15(48):19757-19766. doi: 10.1039/d3nr04082h.

Authors

Jaemin Park¹, Thomas P Shalvey², Thomas Moehl³, Kyoohee Woo⁴, Jonathan D Major², S David Tilley³, Wooseok Yang^{1

5}

Affiliations

¹ School of Chemical Engineering, Sungkyunkwan University (SKKU), 16419, Republic of Korea. wooseok.yang@skku.edu.
² Stephenson Institute for Renewable Energy, Physics Department, University of Liverpool, Liverpool L69 7ZF, UK.
³ Department of Chemistry, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland.
⁴ Department of Printed Electronics, Korea Institute of Machinery & Materials, Daejeon 305-343, South Korea.
⁵ SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea.

PMID: 38050427
DOI: 10.1039/d3nr04082h

Abstract

Sb₂Se₃, consisting of one-dimensional (Sb₄Se₆)_n nanoribbons has drawn attention as an intriguing light absorber from the photovoltaics (PVs) research community. However, further research is required on the performance-limiting factors in Sb₂Se₃ PVs. In this study, we investigated the charge carrier behavior in Sb₂Se₃ PVs by impedance spectroscopy (IS) under light illumination. (Sb₄Se₆)_n nanoribbons with two different orientations were used to investigate the effect of crystal orientation on the device performance. Regardless of the (Sb₄Se₆)_n orientation, negative capacitance was observed at forward bias, representing a recombination pathway at the TiO₂/Sb₂Se₃ interface. A comparison of the recombination resistances and lifetimes of two different Sb₂Se₃ PVs showed that a better interface could be formed by placing the (Sb₄Se₆)_n ribbons parallel to the TiO₂ layer. Based on these observations, an ideal structure of the Sb₂Se₃/TiO₂ interface is proposed, which will enhance the performance of Sb₂Se₃ PVs toward its theoretical limit.