2D Tellurium Films Based Self-drive Near Infrared Photodetector

Luji Li; Gaojie Zhang; Muhammad Younis; Tianyuan Luo; Li Yang; Wen Jin; Hao Wu; Bichen Xiao; Wenfeng Zhang; Haixin Chang

doi:10.1002/cphc.202400383

2D Tellurium Films Based Self-drive Near Infrared Photodetector

Chemphyschem. 2024 Apr 25:e202400383. doi: 10.1002/cphc.202400383. Online ahead of print.

Authors

Luji Li¹, Gaojie Zhang¹, Muhammad Younis¹, Tianyuan Luo¹, Li Yang², Wen Jin³, Hao Wu⁴, Bichen Xiao¹, Wenfeng Zhang¹, Haixin Chang⁵

Affiliations

¹ Huazhong University of Science and Technology, School of Materials Science and Engineering, Wuhan, China, CHINA.
² Huazhong University of Science and Technology, School of Materials Science and Engineering, Wu han, China, CHINA.
³ Huazhong University of Science and Technology, School of Materials Science and Engineering, CHINA.
⁴ Huazhong University of Science and Technology, School of Materials Science and Engineering, lu yu road No.1037, Wu han, China, CHINA.
⁵ Huazhong University of Science and Technology - Wuchang Campus: Huazhong University of Science and Technology, School of Materials Science and Engineering, 1037 #, Luoyu Road, Wuhan, 430074, Hubei, China, Wuhan, CHINA.

PMID: 38661567
DOI: 10.1002/cphc.202400383

Abstract

To reduce the amount of energy consumed in integrated circuits, high efficiency with the lowest energy is always expected. Self-drive device is one of the options in the pursuit of low power nanodevices. It is a typical strategy to form an internal electric field by constructing a heterojunction in self-drive semiconductor system. Here, a two-step method is proposed to prepare high quality centimeter-sized 2D tellurium (Te) thin film with hall mobility as high as 37.3 cm2V-1s-1, and the 2D Te film is further assembled with silicon to form a heterojunction for self-drive photodetector, which can realize effective detection from visible to near infrared bands. The photodetectivity of the heterojunctions can reach 1.58 × 1011 Jones under the illumination of 400 nm@ 1.615 mW/cm2 and 2.08 x 108 Jones under the illumination of 1550 nm@ 1.511mW/cm2 without bias. Our experiments demonstrate the potential of 2D tellurium thin films for wide band and near infrared integrated device applications.

Keywords: Two-dimensional, Tellurium Films, heterojunctions, Self-drive, Infrared Photodetector.