Olsson RH 3rd - Search Results

1

Frequency tunable magnetostatic wave filters with zero static power magnetic biasing circuitry.

Du X, Idjadi MH, Ding Y, Zhang T, Geers AJ, Yao S, Pyo JB, Aflatouni F, Allen M, Olsson RH 3rd. Du X, et al. Among authors: olsson rh 3rd. Nat Commun. 2024 Apr 27;15(1):3582. doi: 10.1038/s41467-024-47822-3. Nat Commun. 2024. PMID: 38678044 Free PMC article.

2

High Isolation, Double-Clamped, Magnetoelectric Microelectromechanical Resonator Magnetometer.

Mion T, D'Agati MJ, Sofronici S, Bussmann K, Staruch M, Kost JL, Co K, Olsson RH 3rd, Finkel P. Mion T, et al. Among authors: olsson rh 3rd. Sensors (Basel). 2023 Oct 21;23(20):8626. doi: 10.3390/s23208626. Sensors (Basel). 2023. PMID: 37896719 Free PMC article.

3

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors.

Kim KH, Oh S, Fiagbenu MMA, Zheng J, Musavigharavi P, Kumar P, Trainor N, Aljarb A, Wan Y, Kim HM, Katti K, Song S, Kim G, Tang Z, Fu JH, Hakami M, Tung V, Redwing JM, Stach EA, Olsson RH 3rd, Jariwala D. Kim KH, et al. Among authors: olsson rh 3rd. Nat Nanotechnol. 2023 Sep;18(9):1044-1050. doi: 10.1038/s41565-023-01399-y. Epub 2023 May 22. Nat Nanotechnol. 2023. PMID: 37217764

4

Wurtzite and fluorite ferroelectric materials for electronic memory.

Kim KH, Karpov I, Olsson RH 3rd, Jariwala D. Kim KH, et al. Among authors: olsson rh 3rd. Nat Nanotechnol. 2023 May;18(5):422-441. doi: 10.1038/s41565-023-01361-y. Epub 2023 Apr 27. Nat Nanotechnol. 2023. PMID: 37106053 Review.

5

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes.

Liu X, Ting J, He Y, Fiagbenu MMA, Zheng J, Wang D, Frost J, Musavigharavi P, Esteves G, Kisslinger K, Anantharaman SB, Stach EA, Olsson RH 3rd, Jariwala D. Liu X, et al. Among authors: olsson rh 3rd. Nano Lett. 2022 Sep 28;22(18):7690-7698. doi: 10.1021/acs.nanolett.2c03169. Epub 2022 Sep 19. Nano Lett. 2022. PMID: 36121208

6

Compensation of the Stress Gradient in Physical Vapor Deposited Al_1-xSc_xN Films for Microelectromechanical Systems with Low Out-of-Plane Bending.

Beaucejour R, D'Agati M, Kalyan K, Olsson RH 3rd. Beaucejour R, et al. Among authors: olsson rh 3rd. Micromachines (Basel). 2022 Jul 24;13(8):1169. doi: 10.3390/mi13081169. Micromachines (Basel). 2022. PMID: 35893167 Free PMC article.

7

Vertical and Lateral Etch Survey of Ferroelectric AlN/Al_1-xSc_xN in Aqueous KOH Solutions.

Tang Z, Esteves G, Zheng J, Olsson RH 3rd. Tang Z, et al. Among authors: olsson rh 3rd. Micromachines (Basel). 2022 Jul 2;13(7):1066. doi: 10.3390/mi13071066. Micromachines (Basel). 2022. PMID: 35888883 Free PMC article.

8

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Liu X, Wang D, Kim KH, Katti K, Zheng J, Musavigharavi P, Miao J, Stach EA, Olsson RH 3rd, Jariwala D. Liu X, et al. Among authors: olsson rh 3rd. Nano Lett. 2021 May 12;21(9):3753-3761. doi: 10.1021/acs.nanolett.0c05051. Epub 2021 Apr 21. Nano Lett. 2021. PMID: 33881884

9

Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond.

Song Y, Perez C, Esteves G, Lundh JS, Saltonstall CB, Beechem TE, Yang JI, Ferri K, Brown JE, Tang Z, Maria JP, Snyder DW, Olsson RH 3rd, Griffin BA, Trolier-McKinstry SE, Foley BM, Choi S. Song Y, et al. Among authors: olsson rh 3rd. ACS Appl Mater Interfaces. 2021 Apr 28;13(16):19031-19041. doi: 10.1021/acsami.1c02912. Epub 2021 Apr 14. ACS Appl Mater Interfaces. 2021. PMID: 33851815

10

Elucidating the origin of spurious modes in aluminum nitride microresonators using a 2-D finite-element model.

Branch DW, Wojciechowski KE, Olsson RH 3rd. Branch DW, et al. Among authors: olsson rh 3rd. IEEE Trans Ultrason Ferroelectr Freq Control. 2014 May;61(5):729-38. doi: 10.1109/TUFFC.2014.6805687. IEEE Trans Ultrason Ferroelectr Freq Control. 2014. PMID: 24802295

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