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Multiple trapping of hydrogen at boron and phosphorus in silicon.
Korpás L, Corbett JW, Estreicher SK. Korpás L, et al. Among authors: corbett jw. Phys Rev B Condens Matter. 1992 Nov 15;46(19):12365-12370. doi: 10.1103/physrevb.46.12365. Phys Rev B Condens Matter. 1992. PMID: 10003150 No abstract available.
Photoluminescence study of radiative channels in ion-implanted silicon.
Awadelkarim OO, Henry A, Monemar B, Lindström JL, Zhang Y, Corbett JW. Awadelkarim OO, et al. Among authors: corbett jw. Phys Rev B Condens Matter. 1990 Sep 15;42(9):5635-5640. doi: 10.1103/physrevb.42.5635. Phys Rev B Condens Matter. 1990. PMID: 9996148 No abstract available.
Charge state of hydrogen in crystalline silicon.
Deák P, Snyder LC, Corbett JW. Deák P, et al. Among authors: corbett jw. Phys Rev B Condens Matter. 1991 Feb 15;43(5):4545-4547. doi: 10.1103/physrevb.43.4545. Phys Rev B Condens Matter. 1991. PMID: 9997820 No abstract available.
Divacancy acceptor levels in ion-irradiated silicon.
Svensson BG, Mohadjeri B, Hallén A, Svensson JH, Corbett JW. Svensson BG, et al. Among authors: corbett jw. Phys Rev B Condens Matter. 1991 Jan 15;43(3):2292-2298. doi: 10.1103/physrevb.43.2292. Phys Rev B Condens Matter. 1991. PMID: 9997504 No abstract available.
State and motion of hydrogen in crystalline silicon.
Deák P, Snyder LC, Corbett JW. Deák P, et al. Among authors: corbett jw. Phys Rev B Condens Matter. 1988 Apr 15;37(12):6887-6892. doi: 10.1103/physrevb.37.6887. Phys Rev B Condens Matter. 1988. PMID: 9943958 No abstract available.
Hydrogen passivation of a substitutional sulfur defect in silicon.
Yapsir AS, Deák P, Singh RK, Snyder LC, Corbett JW, Lu T. Yapsir AS, et al. Among authors: corbett jw. Phys Rev B Condens Matter. 1988 Nov 15;38(14):9936-9940. doi: 10.1103/physrevb.38.9936. Phys Rev B Condens Matter. 1988. PMID: 9945819 No abstract available.
32 results