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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2022 | 2 |
2023 | 3 |
2024 | 1 |
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Page 1
Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective.
Micromachines (Basel). 2023 May 18;14(5):1074. doi: 10.3390/mi14051074.
Micromachines (Basel). 2023.
PMID: 37241697
Free PMC article.
A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances.
Guo J, Hu S, Li P, Jiang J, Wang R, Wang Y, Wu H.
Guo J, et al.
Micromachines (Basel). 2022 Mar 18;13(3):464. doi: 10.3390/mi13030464.
Micromachines (Basel). 2022.
PMID: 35334756
Free PMC article.
Item in Clipboard
Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure.
Wang Y, Liu T, Qian L, Wu H, Yu Y, Tao J, Cheng Z, Hu S.
Wang Y, et al.
Micromachines (Basel). 2023 Mar 20;14(3):688. doi: 10.3390/mi14030688.
Micromachines (Basel). 2023.
PMID: 36985094
Free PMC article.
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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching.
Li P, Guo J, Hu S, Lin Z.
Li P, et al.
Micromachines (Basel). 2023 Jun 22;14(7):1282. doi: 10.3390/mi14071282.
Micromachines (Basel). 2023.
PMID: 37512592
Free PMC article.
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SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss.
Ran S, Huang Z, Hu S, Yang H.
Ran S, et al.
Micromachines (Basel). 2022 Feb 1;13(2):248. doi: 10.3390/mi13020248.
Micromachines (Basel). 2022.
PMID: 35208372
Free PMC article.
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A Novel Asymmetric Trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance.
Yu Y, Cheng Z, Hu Y, Lv R, Hu S.
Yu Y, et al.
Micromachines (Basel). 2024 Mar 29;15(4):461. doi: 10.3390/mi15040461.
Micromachines (Basel). 2024.
PMID: 38675272
Free PMC article.
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