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MoS2 transistors with 1-nanometer gate lengths.
Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HP, Javey A. Desai SB, et al. Among authors: ahn gh. Science. 2016 Oct 7;354(6308):99-102. doi: 10.1126/science.aah4698. Epub 2016 Oct 6. Science. 2016. PMID: 27846499
High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition.
Amani M, Burke RA, Ji X, Zhao P, Lien DH, Taheri P, Ahn GH, Kirya D, Ager JW 3rd, Yablonovitch E, Kong J, Dubey M, Javey A. Amani M, et al. Among authors: ahn gh. ACS Nano. 2016 Jul 26;10(7):6535-41. doi: 10.1021/acsnano.6b03443. Epub 2016 Jun 15. ACS Nano. 2016. PMID: 27291297
Measuring the Edge Recombination Velocity of Monolayer Semiconductors.
Zhao P, Amani M, Lien DH, Ahn GH, Kiriya D, Mastandrea JP, Ager JW 3rd, Yablonovitch E, Chrzan DC, Javey A. Zhao P, et al. Among authors: ahn gh. Nano Lett. 2017 Sep 13;17(9):5356-5360. doi: 10.1021/acs.nanolett.7b01770. Epub 2017 Aug 18. Nano Lett. 2017. PMID: 28814079
Strain-engineered growth of two-dimensional materials.
Ahn GH, Amani M, Rasool H, Lien DH, Mastandrea JP, Ager Iii JW, Dubey M, Chrzan DC, Minor AM, Javey A. Ahn GH, et al. Nat Commun. 2017 Sep 20;8(1):608. doi: 10.1038/s41467-017-00516-5. Nat Commun. 2017. PMID: 28931806 Free PMC article.
59 results