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Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography.
Nano Lett. 2014 Feb 12;14(2):960-6. doi: 10.1021/nl404376m. Epub 2014 Jan 29.
Nano Lett. 2014.
PMID: 24467394
Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
Munshi AM, et al. Among authors: fauske vt.
Nano Lett. 2012 Sep 12;12(9):4570-6. doi: 10.1021/nl3018115. Epub 2012 Aug 23.
Nano Lett. 2012.
PMID: 22889019
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In Situ Heat-Induced Replacement of GaAs Nanowires by Au.
Fauske VT, Huh J, Divitini G, Dheeraj DL, Munshi AM, Ducati C, Weman H, Fimland BO, van Helvoort AT.
Fauske VT, et al.
Nano Lett. 2016 May 11;16(5):3051-7. doi: 10.1021/acs.nanolett.6b00109. Epub 2016 Apr 28.
Nano Lett. 2016.
PMID: 27104293
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Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.
Heilmann M, Munshi AM, Sarau G, Göbelt M, Tessarek C, Fauske VT, van Helvoort AT, Yang J, Latzel M, Hoffmann B, Conibeer G, Weman H, Christiansen S.
Heilmann M, et al. Among authors: fauske vt.
Nano Lett. 2016 Jun 8;16(6):3524-32. doi: 10.1021/acs.nanolett.6b00484. Epub 2016 May 3.
Nano Lett. 2016.
PMID: 27124605
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In situ electronic probing of semiconducting nanowires in an electron microscope.
Fauske VT, Erlbeck MB, Huh J, Kim DC, Munshi AM, Dheeraj DL, Weman H, Fimland BO, Van Helvoort AT.
Fauske VT, et al.
J Microsc. 2016 May;262(2):183-8. doi: 10.1111/jmi.12328. Epub 2015 Oct 26.
J Microsc. 2016.
PMID: 26501240
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Rapid estimation of catalyst nanoparticle morphology and atomic-coordination by high-resolution Z-contrast electron microscopy.
Jones L, MacArthur KE, Fauske VT, van Helvoort AT, Nellist PD.
Jones L, et al. Among authors: fauske vt.
Nano Lett. 2014 Nov 12;14(11):6336-41. doi: 10.1021/nl502762m. Epub 2014 Oct 27.
Nano Lett. 2014.
PMID: 25340541
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