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Self-catalyzed MBE grown GaAs/GaAs(x)Sb(1-x) core-shell nanowires in ZB and WZ crystal structures.
Nanotechnology. 2013 Oct 11;24(40):405601. doi: 10.1088/0957-4484/24/40/405601. Epub 2013 Sep 12.
Nanotechnology. 2013.
PMID: 24028926
Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications.
Ghalamestani SG, Johansson S, Borg BM, Lind E, Dick KA, Wernersson LE.
Ghalamestani SG, et al.
Nanotechnology. 2012 Jan 13;23(1):015302. doi: 10.1088/0957-4484/23/1/015302. Epub 2011 Dec 8.
Nanotechnology. 2012.
PMID: 22155896
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Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires.
Tornberg M, Mårtensson EK, Zamani RR, Lehmann S, Dick KA, Ghalamestani SG.
Tornberg M, et al. Among authors: ghalamestani sg.
Nanotechnology. 2016 Apr 29;27(17):175602. doi: 10.1088/0957-4484/27/17/175602. Epub 2016 Mar 17.
Nanotechnology. 2016.
PMID: 26984940
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Direct nucleation, morphology and compositional tuning of InAs1-x Sb x nanowires on InAs (111) B substrates.
Namazi L, Ghalamestani SG, Lehmann S, Zamani RR, Dick KA.
Namazi L, et al. Among authors: ghalamestani sg.
Nanotechnology. 2017 Apr 21;28(16):165601. doi: 10.1088/1361-6528/aa6518.
Nanotechnology. 2017.
PMID: 28346221
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Morphology and composition controlled Ga(x)In(1-x)Sb nanowires: understanding ternary antimonide growth.
Ghalamestani SG, Ek M, Ghasemi M, Caroff P, Johansson J, Dick KA.
Ghalamestani SG, et al.
Nanoscale. 2014 Jan 21;6(2):1086-92. doi: 10.1039/c3nr05079c.
Nanoscale. 2014.
PMID: 24296789
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Schottky barrier and contact resistance of InSb nanowire field-effect transistors.
Fan D, Kang N, Ghalamestani SG, Dick KA, Xu HQ.
Fan D, et al. Among authors: ghalamestani sg.
Nanotechnology. 2016 Jul 8;27(27):275204. doi: 10.1088/0957-4484/27/27/275204. Epub 2016 May 27.
Nanotechnology. 2016.
PMID: 27232588
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