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MoS2 transistors with 1-nanometer gate lengths.
Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HP, Javey A. Desai SB, et al. Among authors: hu c. Science. 2016 Oct 7;354(6308):99-102. doi: 10.1126/science.aah4698. Epub 2016 Oct 6. Science. 2016. PMID: 27846499
Monolithic 3D CMOS Using Layered Semiconductors.
Sachid AB, Tosun M, Desai SB, Hsu CY, Lien DH, Madhvapathy SR, Chen YZ, Hettick M, Kang JS, Zeng Y, He JH, Chang EY, Chueh YL, Javey A, Hu C. Sachid AB, et al. Among authors: hu c. Adv Mater. 2016 Apr 6;28(13):2547-54. doi: 10.1002/adma.201505113. Epub 2016 Feb 2. Adv Mater. 2016. PMID: 26833783
Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors.
Cheema SS, Shanker N, Wang LC, Hsu CH, Hsu SL, Liao YH, San Jose M, Gomez J, Chakraborty W, Li W, Bae JH, Volkman SK, Kwon D, Rho Y, Pinelli G, Rastogi R, Pipitone D, Stull C, Cook M, Tyrrell B, Stoica VA, Zhang Z, Freeland JW, Tassone CJ, Mehta A, Saheli G, Thompson D, Suh DI, Koo WT, Nam KJ, Jung DJ, Song WB, Lin CH, Nam S, Heo J, Parihar N, Grigoropoulos CP, Shafer P, Fay P, Ramesh R, Mahapatra S, Ciston J, Datta S, Mohamed M, Hu C, Salahuddin S. Cheema SS, et al. Among authors: hu c. Nature. 2022 Apr;604(7904):65-71. doi: 10.1038/s41586-022-04425-6. Epub 2022 Apr 6. Nature. 2022. PMID: 35388197
Single crystal functional oxides on silicon.
Bakaul SR, Serrao CR, Lee M, Yeung CW, Sarker A, Hsu SL, Yadav AK, Dedon L, You L, Khan AI, Clarkson JD, Hu C, Ramesh R, Salahuddin S. Bakaul SR, et al. Among authors: hu c. Nat Commun. 2016 Feb 8;7:10547. doi: 10.1038/ncomms10547. Nat Commun. 2016. PMID: 26853112 Free PMC article.
Spatially resolved steady-state negative capacitance.
Yadav AK, Nguyen KX, Hong Z, García-Fernández P, Aguado-Puente P, Nelson CT, Das S, Prasad B, Kwon D, Cheema S, Khan AI, Hu C, Íñiguez J, Junquera J, Chen LQ, Muller DA, Ramesh R, Salahuddin S. Yadav AK, et al. Among authors: hu c. Nature. 2019 Jan;565(7740):468-471. doi: 10.1038/s41586-018-0855-y. Epub 2019 Jan 14. Nature. 2019. PMID: 30643207
Enhanced ferroelectricity in ultrathin films grown directly on silicon.
Cheema SS, Kwon D, Shanker N, Dos Reis R, Hsu SL, Xiao J, Zhang H, Wagner R, Datar A, McCarter MR, Serrao CR, Yadav AK, Karbasian G, Hsu CH, Tan AJ, Wang LC, Thakare V, Zhang X, Mehta A, Karapetrova E, Chopdekar RV, Shafer P, Arenholz E, Hu C, Proksch R, Ramesh R, Ciston J, Salahuddin S. Cheema SS, et al. Among authors: hu c. Nature. 2020 Apr;580(7804):478-482. doi: 10.1038/s41586-020-2208-x. Epub 2020 Apr 22. Nature. 2020. PMID: 32322080
Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon.
Cheema SS, Kwon D, Shanker N, Dos Reis R, Hsu SL, Xiao J, Zhang H, Wagner R, Datar A, McCarter MR, Serrao CR, Yadav AK, Karbasian G, Hsu CH, Tan AJ, Wang LC, Thakare V, Zhang X, Mehta A, Karapetrova E, Chopdekar RV, Shafer P, Arenholz E, Hu C, Proksch R, Ramesh R, Ciston J, Salahuddin S. Cheema SS, et al. Among authors: hu c. Nature. 2020 May;581(7808):E5. doi: 10.1038/s41586-020-2297-6. Nature. 2020. PMID: 32433606
Author Correction: Spatially resolved steady-state negative capacitance.
Yadav AK, Nguyen KX, Hong Z, García-Fernández P, Aguado-Puente P, Nelson CT, Das S, Prasad B, Kwon D, Cheema S, Khan AI, Hu C, Íñiguez J, Junquera J, Chen LQ, Muller DA, Ramesh R, Salahuddin S. Yadav AK, et al. Among authors: hu c. Nature. 2019 Apr;568(7753):E13. doi: 10.1038/s41586-019-1106-6. Nature. 2019. PMID: 30971827
Visualizing Ferroelectric Uniformity of Hf1-xZrxO2 Films Using X-ray Mapping.
Chang SJ, Teng CY, Lin YJ, Wu TM, Lee MH, Lin BH, Tang MT, Wu TS, Hu C, Tang EY, Tseng YC. Chang SJ, et al. Among authors: hu c. ACS Appl Mater Interfaces. 2021 Jun 23;13(24):29212-29221. doi: 10.1021/acsami.1c08265. Epub 2021 Jun 13. ACS Appl Mater Interfaces. 2021. PMID: 34121385
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