Karg S - Search Results

1

Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress.

Signorello G, Lörtscher E, Khomyakov PA, Karg S, Dheeraj DL, Gotsmann B, Weman H, Riel H. Signorello G, et al. Among authors: karg s. Nat Commun. 2014 Apr 10;5:3655. doi: 10.1038/ncomms4655. Nat Commun. 2014. PMID: 24718053 Free article.

2

Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain.

Signorello G, Karg S, Björk MT, Gotsmann B, Riel H. Signorello G, et al. Among authors: karg s. Nano Lett. 2013 Mar 13;13(3):917-24. doi: 10.1021/nl303694c. Epub 2013 Feb 18. Nano Lett. 2013. PMID: 23237482

3

Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors.

Moselund KE, Ghoneim H, Schmid H, Björk MT, Lörtscher E, Karg S, Signorello G, Webb D, Tschudy M, Beyeler R, Riel H. Moselund KE, et al. Among authors: karg s. Nanotechnology. 2010 Oct 29;21(43):435202. doi: 10.1088/0957-4484/21/43/435202. Epub 2010 Oct 4. Nanotechnology. 2010. PMID: 20890021

4

Heat transport through atomic contacts.

Mosso N, Drechsler U, Menges F, Nirmalraj P, Karg S, Riel H, Gotsmann B. Mosso N, et al. Among authors: karg s. Nat Nanotechnol. 2017 May;12(5):430-433. doi: 10.1038/nnano.2016.302. Epub 2017 Feb 6. Nat Nanotechnol. 2017. PMID: 28166205

5

Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors.

Karg SF, Troncale V, Drechsler U, Mensch P, Das Kanungo P, Schmid H, Schmidt V, Gignac L, Riel H, Gotsmann B. Karg SF, et al. Nanotechnology. 2014 Aug 1;25(30):305702. doi: 10.1088/0957-4484/25/30/305702. Epub 2014 Jul 9. Nanotechnology. 2014. PMID: 25004861

6

Fully depleted nanowire field-effect transistor in inversion mode.

Hayden O, Björk MT, Schmid H, Riel H, Drechsler U, Karg SF, Lörtscher E, Riess W. Hayden O, et al. Small. 2007 Feb;3(2):230-4. doi: 10.1002/smll.200600325. Small. 2007. PMID: 17199244 No abstract available.

7

Doping limits of grown in situ doped silicon nanowires using phosphine.

Schmid H, Björk MT, Knoch J, Karg S, Riel H, Riess W. Schmid H, et al. Among authors: karg s. Nano Lett. 2009 Jan;9(1):173-7. doi: 10.1021/nl802739v. Nano Lett. 2009. PMID: 19099512

8

In situ doping of catalyst-free InAs nanowires.

Ghoneim H, Mensch P, Schmid H, Bessire CD, Rhyner R, Schenk A, Rettner C, Karg S, Moselund KE, Riel H, Björk MT. Ghoneim H, et al. Among authors: karg s. Nanotechnology. 2012 Dec 21;23(50):505708. doi: 10.1088/0957-4484/23/50/505708. Epub 2012 Nov 27. Nanotechnology. 2012. PMID: 23187068

9

Realization of a silicon nanowire vertical surround-gate field-effect transistor.

Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U. Schmidt V, et al. Among authors: karg s. Small. 2006 Jan;2(1):85-8. doi: 10.1002/smll.200500181. Small. 2006. PMID: 17193560 No abstract available.

10

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

Gooth J, Borg M, Schmid H, Schaller V, Wirths S, Moselund K, Luisier M, Karg S, Riel H. Gooth J, et al. Among authors: karg s. Nano Lett. 2017 Apr 12;17(4):2596-2602. doi: 10.1021/acs.nanolett.7b00400. Epub 2017 Mar 27. Nano Lett. 2017. PMID: 28334529

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