Pitner G - Search Results

1

MoS2 transistors with 1-nanometer gate lengths.

Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HP, Javey A. Desai SB, et al. Among authors: pitner g. Science. 2016 Oct 7;354(6308):99-102. doi: 10.1126/science.aah4698. Epub 2016 Oct 6. Science. 2016. PMID: 27846499

2

Universal Selective Dispersion of Semiconducting Carbon Nanotubes from Commercial Sources Using a Supramolecular Polymer.

Chortos A, Pochorovski I, Lin P, Pitner G, Yan X, Gao TZ, To JWF, Lei T, Will JW 3rd, Wong HP, Bao Z. Chortos A, et al. Among authors: pitner g. ACS Nano. 2017 Jun 27;11(6):5660-5669. doi: 10.1021/acsnano.7b01076. Epub 2017 May 24. ACS Nano. 2017. PMID: 28528552

3

Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length.

Pitner G, Hills G, Llinas JP, Persson KM, Park R, Bokor J, Mitra S, Wong HP. Pitner G, et al. Nano Lett. 2019 Feb 13;19(2):1083-1089. doi: 10.1021/acs.nanolett.8b04370. Epub 2019 Jan 31. Nano Lett. 2019. PMID: 30677297

4

Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes.

Lei T, Shao LL, Zheng YQ, Pitner G, Fang G, Zhu C, Li S, Beausoleil R, Wong HP, Huang TC, Cheng KT, Bao Z. Lei T, et al. Among authors: pitner g. Nat Commun. 2019 May 14;10(1):2161. doi: 10.1038/s41467-019-10145-9. Nat Commun. 2019. PMID: 31089127 Free PMC article.

5

Localized Triggering of the Insulator-Metal Transition in VO₂ Using a Single Carbon Nanotube.

Bohaichuk SM, Muñoz Rojo M, Pitner G, McClellan CJ, Lian F, Li J, Jeong J, Samant MG, Parkin SSP, Wong HP, Pop E. Bohaichuk SM, et al. Among authors: pitner g. ACS Nano. 2019 Oct 22;13(10):11070-11077. doi: 10.1021/acsnano.9b03397. Epub 2019 Aug 26. ACS Nano. 2019. PMID: 31393698

6

Fast Spiking of a Mott VO₂-Carbon Nanotube Composite Device.

Bohaichuk SM, Kumar S, Pitner G, McClellan CJ, Jeong J, Samant MG, Wong HP, Parkin SSP, Williams RS, Pop E. Bohaichuk SM, et al. Among authors: pitner g. Nano Lett. 2019 Oct 9;19(10):6751-6755. doi: 10.1021/acs.nanolett.9b01554. Epub 2019 Aug 28. Nano Lett. 2019. PMID: 31433663

7

Gate Quantum Capacitance Effects in Nanoscale Transistors.

Desai SB, Fahad HM, Lundberg T, Pitner G, Kim H, Chrzan D, Wong HP, Javey A. Desai SB, et al. Among authors: pitner g. Nano Lett. 2019 Oct 9;19(10):7130-7137. doi: 10.1021/acs.nanolett.9b02660. Epub 2019 Sep 23. Nano Lett. 2019. PMID: 31532995

8

Ultralow contact resistance between semimetal and monolayer semiconductors.

Shen PC, Su C, Lin Y, Chou AS, Cheng CC, Park JH, Chiu MH, Lu AY, Tang HL, Tavakoli MM, Pitner G, Ji X, Cai Z, Mao N, Wang J, Tung V, Li J, Bokor J, Zettl A, Wu CI, Palacios T, Li LJ, Kong J. Shen PC, et al. Among authors: pitner g. Nature. 2021 May;593(7858):211-217. doi: 10.1038/s41586-021-03472-9. Epub 2021 May 12. Nature. 2021. PMID: 33981050

9

Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors.

Lin Q, Gilardi C, Su SK, Zhang Z, Chen E, Bandaru P, Kummel A, Radu I, Mitra S, Pitner G, Wong HP. Lin Q, et al. Among authors: pitner g. ACS Nano. 2023 Nov 14;17(21):21083-21092. doi: 10.1021/acsnano.3c04346. Epub 2023 Nov 1. ACS Nano. 2023. PMID: 37910857

10

VLSI-compatible carbon nanotube doping technique with low work-function metal oxides.

Suriyasena Liyanage L, Xu X, Pitner G, Bao Z, Wong HS. Suriyasena Liyanage L, et al. Among authors: pitner g. Nano Lett. 2014;14(4):1884-90. doi: 10.1021/nl404654j. Epub 2014 Mar 24. Nano Lett. 2014. PMID: 24628497

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