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MoS2 transistors with 1-nanometer gate lengths.
Science. 2016 Oct 7;354(6308):99-102. doi: 10.1126/science.aah4698. Epub 2016 Oct 6.
Science. 2016.
PMID: 27846499
Field-effect transistors built from all two-dimensional material components.
Roy T, Tosun M, Kang JS, Sachid AB, Desai SB, Hettick M, Hu CC, Javey A.
Roy T, et al. Among authors: sachid ab.
ACS Nano. 2014 Jun 24;8(6):6259-64. doi: 10.1021/nn501723y. Epub 2014 May 7.
ACS Nano. 2014.
PMID: 24779528
Free article.
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Monolithic 3D CMOS Using Layered Semiconductors.
Sachid AB, Tosun M, Desai SB, Hsu CY, Lien DH, Madhvapathy SR, Chen YZ, Hettick M, Kang JS, Zeng Y, He JH, Chang EY, Chueh YL, Javey A, Hu C.
Sachid AB, et al.
Adv Mater. 2016 Apr 6;28(13):2547-54. doi: 10.1002/adma.201505113. Epub 2016 Feb 2.
Adv Mater. 2016.
PMID: 26833783
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High-gain inverters based on WSe2 complementary field-effect transistors.
Tosun M, Chuang S, Fang H, Sachid AB, Hettick M, Lin Y, Zeng Y, Javey A.
Tosun M, et al. Among authors: sachid ab.
ACS Nano. 2014 May 27;8(5):4948-53. doi: 10.1021/nn5009929. Epub 2014 Apr 3.
ACS Nano. 2014.
PMID: 24684575
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