Scappucci G - Search Results

1

Exploring the limits of N-type ultra-shallow junction formation.

Polley CM, Clarke WR, Miwa JA, Scappucci G, Wells JW, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons M. Polley CM, et al. Among authors: scappucci g. ACS Nano. 2013 Jun 25;7(6):5499-505. doi: 10.1021/nn4016407. Epub 2013 May 30. ACS Nano. 2013. PMID: 23721101

2

Author Correction: A shuttling-based two-qubit logic gate for linking distant silicon quantum processors.

Noiri A, Takeda K, Nakajima T, Kobayashi T, Sammak A, Scappucci G, Tarucha S. Noiri A, et al. Among authors: scappucci g. Nat Commun. 2022 Nov 1;13(1):6542. doi: 10.1038/s41467-022-34236-2. Nat Commun. 2022. PMID: 36319646 Free PMC article. No abstract available.

3

Realization of atomically controlled dopant devices in silicon.

Ruess FJ, Pok W, Reusch TC, Butcher MJ, Goh KE, Oberbeck L, Scappucci G, Hamilton AR, Simmons MY. Ruess FJ, et al. Among authors: scappucci g. Small. 2007 Apr;3(4):563-7. doi: 10.1002/smll.200600680. Small. 2007. PMID: 17340667 No abstract available.

4

Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy.

Scappucci G, Capellini G, Lee WC, Simmons MY. Scappucci G, et al. Nanotechnology. 2009 Dec 9;20(49):495302. doi: 10.1088/0957-4484/20/49/495302. Epub 2009 Nov 6. Nanotechnology. 2009. PMID: 19893153

5

Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices.

Klesse WM, Scappucci G, Capellini G, Simmons MY. Klesse WM, et al. Among authors: scappucci g. Nanotechnology. 2011 Apr 8;22(14):145604. doi: 10.1088/0957-4484/22/14/145604. Epub 2011 Mar 3. Nanotechnology. 2011. PMID: 21368353

6

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium.

Scappucci G, Capellini G, Johnston B, Klesse WM, Miwa JA, Simmons MY. Scappucci G, et al. Nano Lett. 2011 Jun 8;11(6):2272-9. doi: 10.1021/nl200449v. Epub 2011 May 10. Nano Lett. 2011. PMID: 21553900

7

Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers.

Scappucci G, Capellini G, Klesse WM, Simmons MY. Scappucci G, et al. Nanotechnology. 2011 Sep 16;22(37):375203. doi: 10.1088/0957-4484/22/37/375203. Epub 2011 Aug 22. Nanotechnology. 2011. PMID: 21857100

8

Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport.

Scappucci G, Klesse WM, Hamilton AR, Capellini G, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons MY. Scappucci G, et al. Nano Lett. 2012 Sep 12;12(9):4953-9. doi: 10.1021/nl302558b. Epub 2012 Sep 4. Nano Lett. 2012. PMID: 22935029

9

n-type doping of germanium from phosphine: early stages resolved at the atomic level.

Scappucci G, Warschkow O, Capellini G, Klesse WM, McKenzie DR, Simmons MY. Scappucci G, et al. Phys Rev Lett. 2012 Aug 17;109(7):076101. doi: 10.1103/PhysRevLett.109.076101. Epub 2012 Aug 13. Phys Rev Lett. 2012. PMID: 23006385

10

Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture.

McKibbin SR, Scappucci G, Pok W, Simmons MY. McKibbin SR, et al. Among authors: scappucci g. Nanotechnology. 2013 Feb 1;24(4):045303. doi: 10.1088/0957-4484/24/4/045303. Epub 2013 Jan 4. Nanotechnology. 2013. PMID: 23291418

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