Simmons M - Search Results

1

Exploring the limits of N-type ultra-shallow junction formation.

Polley CM, Clarke WR, Miwa JA, Scappucci G, Wells JW, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons M. Polley CM, et al. Among authors: simmons m. ACS Nano. 2013 Jun 25;7(6):5499-505. doi: 10.1021/nn4016407. Epub 2013 May 30. ACS Nano. 2013. PMID: 23721101

2

Zeeman splitting in ballistic hole quantum wires.

Danneau R, Klochan O, Clarke WR, Ho LH, Micolich AP, Simmons MY, Hamilton AR, Pepper M, Ritchie DA, Zülicke U. Danneau R, et al. Among authors: simmons my. Phys Rev Lett. 2006 Jul 14;97(2):026403. doi: 10.1103/PhysRevLett.97.026403. Epub 2006 Jul 11. Phys Rev Lett. 2006. PMID: 16907466

3

Realization of atomically controlled dopant devices in silicon.

Ruess FJ, Pok W, Reusch TC, Butcher MJ, Goh KE, Oberbeck L, Scappucci G, Hamilton AR, Simmons MY. Ruess FJ, et al. Small. 2007 Apr;3(4):563-7. doi: 10.1002/smll.200600680. Small. 2007. PMID: 17340667 No abstract available.

4

0.7 Structure and zero bias anomaly in ballistic hole quantum wires.

Danneau R, Klochan O, Clarke WR, Ho LH, Micolich AP, Simmons MY, Hamilton AR, Pepper M, Ritchie DA. Danneau R, et al. Among authors: simmons my. Phys Rev Lett. 2008 Jan 11;100(1):016403. doi: 10.1103/PhysRevLett.100.016403. Epub 2008 Jan 10. Phys Rev Lett. 2008. PMID: 18232794 Free article.

5

Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy.

Scappucci G, Capellini G, Lee WC, Simmons MY. Scappucci G, et al. Among authors: simmons my. Nanotechnology. 2009 Dec 9;20(49):495302. doi: 10.1088/0957-4484/20/49/495302. Epub 2009 Nov 6. Nanotechnology. 2009. PMID: 19893153

6

Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices.

Klesse WM, Scappucci G, Capellini G, Simmons MY. Klesse WM, et al. Among authors: simmons my. Nanotechnology. 2011 Apr 8;22(14):145604. doi: 10.1088/0957-4484/22/14/145604. Epub 2011 Mar 3. Nanotechnology. 2011. PMID: 21368353

7

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium.

Scappucci G, Capellini G, Johnston B, Klesse WM, Miwa JA, Simmons MY. Scappucci G, et al. Among authors: simmons my. Nano Lett. 2011 Jun 8;11(6):2272-9. doi: 10.1021/nl200449v. Epub 2011 May 10. Nano Lett. 2011. PMID: 21553900

8

Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers.

Scappucci G, Capellini G, Klesse WM, Simmons MY. Scappucci G, et al. Among authors: simmons my. Nanotechnology. 2011 Sep 16;22(37):375203. doi: 10.1088/0957-4484/22/37/375203. Epub 2011 Aug 22. Nanotechnology. 2011. PMID: 21857100

9

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements.

Polley CM, Clarke WR, Simmons MY. Polley CM, et al. Among authors: simmons my. Nanoscale Res Lett. 2011 Oct 3;6(1):538. doi: 10.1186/1556-276X-6-538. Nanoscale Res Lett. 2011. PMID: 21968083 Free PMC article.

10

A single-atom transistor.

Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LC, Klimeck G, Simmons MY. Fuechsle M, et al. Among authors: simmons my. Nat Nanotechnol. 2012 Feb 19;7(4):242-6. doi: 10.1038/nnano.2012.21. Nat Nanotechnol. 2012. PMID: 22343383

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Text availability

Article attribute

Article type

Publication date

1,377 results

Search Page