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Valley splitting in a silicon quantum device platform.
Miwa JA, Warschkow O, Carter DJ, Marks NA, Mazzola F, Simmons MY, Wells JW. Miwa JA, et al. Among authors: simmons my. Nano Lett. 2014 Mar 12;14(3):1515-9. doi: 10.1021/nl404738j. Epub 2014 Mar 3. Nano Lett. 2014. PMID: 24571617
Phosphine dissociation on the Si(001) surface.
Wilson HF, Warschkow O, Marks NA, Schofield SR, Curson NJ, Smith PV, Radny MW, McKenzie DR, Simmons MY. Wilson HF, et al. Among authors: simmons my. Phys Rev Lett. 2004 Nov 26;93(22):226102. doi: 10.1103/PhysRevLett.93.226102. Epub 2004 Nov 23. Phys Rev Lett. 2004. PMID: 15601102
Single P and As dopants in the Si(001) surface.
Radny MW, Smith PV, Reusch TC, Warschkow O, Marks NA, Shi HQ, McKenzie DR, Schofield SR, Curson NJ, Simmons MY. Radny MW, et al. Among authors: simmons my. J Chem Phys. 2007 Nov 14;127(18):184706. doi: 10.1063/1.2786991. J Chem Phys. 2007. PMID: 18020657
A single-atom transistor.
Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LC, Klimeck G, Simmons MY. Fuechsle M, et al. Among authors: simmons my. Nat Nanotechnol. 2012 Feb 19;7(4):242-6. doi: 10.1038/nnano.2012.21. Nat Nanotechnol. 2012. PMID: 22343383
Exploring the limits of N-type ultra-shallow junction formation.
Polley CM, Clarke WR, Miwa JA, Scappucci G, Wells JW, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons M. Polley CM, et al. ACS Nano. 2013 Jun 25;7(6):5499-505. doi: 10.1021/nn4016407. Epub 2013 May 30. ACS Nano. 2013. PMID: 23721101
107 results