Wang Q - Search Results

1

MoS2 transistors with 1-nanometer gate lengths.

Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HP, Javey A. Desai SB, et al. Among authors: wang q. Science. 2016 Oct 7;354(6308):99-102. doi: 10.1126/science.aah4698. Epub 2016 Oct 6. Science. 2016. PMID: 27846499

2

Ru Nanoframes with an fcc Structure and Enhanced Catalytic Properties.

Ye H, Wang Q, Catalano M, Lu N, Vermeylen J, Kim MJ, Liu Y, Sun Y, Xia X. Ye H, et al. Among authors: wang q. Nano Lett. 2016 Apr 13;16(4):2812-7. doi: 10.1021/acs.nanolett.6b00607. Epub 2016 Mar 21. Nano Lett. 2016. PMID: 26999499

3

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM. Azcatl A, et al. Among authors: wang q. Nano Lett. 2016 Sep 14;16(9):5437-43. doi: 10.1021/acs.nanolett.6b01853. Epub 2016 Aug 9. Nano Lett. 2016. PMID: 27494551

4

Tailoring Renal Clearance and Tumor Targeting of Ultrasmall Metal Nanoparticles with Particle Density.

Tang S, Peng C, Xu J, Du B, Wang Q, Vinluan RD 3rd, Yu M, Kim MJ, Zheng J. Tang S, et al. Among authors: wang q. Angew Chem Int Ed Engl. 2016 Dec 23;55(52):16039-16043. doi: 10.1002/anie.201609043. Epub 2016 Nov 24. Angew Chem Int Ed Engl. 2016. PMID: 27882633 Free PMC article.

5

New Mo₆ Te₆ Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe₂.

Zhu H, Wang Q, Zhang C, Addou R, Cho K, Wallace RM, Kim MJ. Zhu H, et al. Among authors: wang q. Adv Mater. 2017 May;29(18). doi: 10.1002/adma.201606264. Epub 2017 Mar 10. Adv Mater. 2017. PMID: 28295727

6

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe₂ Heterostructures.

Burg GW, Prasad N, Fallahazad B, Valsaraj A, Kim K, Taniguchi T, Watanabe K, Wang Q, Kim MJ, Register LF, Tutuc E. Burg GW, et al. Among authors: wang q. Nano Lett. 2017 Jun 14;17(6):3919-3925. doi: 10.1021/acs.nanolett.7b01505. Epub 2017 Jun 2. Nano Lett. 2017. PMID: 28557462

7

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS₂ for Two-Dimensional Material-Based Devices.

Cheng L, Lee J, Zhu H, Ravichandran AV, Wang Q, Lucero AT, Kim MJ, Wallace RM, Colombo L, Kim J. Cheng L, et al. Among authors: wang q. ACS Nano. 2017 Oct 24;11(10):10243-10252. doi: 10.1021/acsnano.7b04813. Epub 2017 Aug 30. ACS Nano. 2017. PMID: 28832118

8

Defects and Surface Structural Stability of MoTe₂ Under Vacuum Annealing.

Zhu H, Wang Q, Cheng L, Addou R, Kim J, Kim MJ, Wallace RM. Zhu H, et al. Among authors: wang q. ACS Nano. 2017 Nov 28;11(11):11005-11014. doi: 10.1021/acsnano.7b04984. Epub 2017 Nov 14. ACS Nano. 2017. PMID: 29116754

9

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.

Zhou G, Addou R, Wang Q, Honari S, Cormier CR, Cheng L, Yue R, Smyth CM, Laturia A, Kim J, Vandenberghe WG, Kim MJ, Wallace RM, Hinkle CL. Zhou G, et al. Among authors: wang q. Adv Mater. 2018 Jul 18:e1803109. doi: 10.1002/adma.201803109. Online ahead of print. Adv Mater. 2018. PMID: 30022534

10

Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO _x Reduction.

Kavrik MS, Ercius P, Cheung J, Tang K, Wang Q, Fruhberger B, Kim M, Taur Y, McIntyre PC, Kummel AC. Kavrik MS, et al. Among authors: wang q. ACS Appl Mater Interfaces. 2019 Apr 24;11(16):15111-15121. doi: 10.1021/acsami.8b22362. Epub 2019 Apr 15. ACS Appl Mater Interfaces. 2019. PMID: 30938163

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