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Exploring the limits of N-type ultra-shallow junction formation.
Polley CM, Clarke WR, Miwa JA, Scappucci G, Wells JW, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons M. Polley CM, et al. Among authors: wells jw. ACS Nano. 2013 Jun 25;7(6):5499-505. doi: 10.1021/nn4016407. Epub 2013 May 30. ACS Nano. 2013. PMID: 23721101
Kinks in the σ band of graphene induced by electron-phonon coupling.
Mazzola F, Wells JW, Yakimova R, Ulstrup S, Miwa JA, Balog R, Bianchi M, Leandersson M, Adell J, Hofmann P, Balasubramanian T. Mazzola F, et al. Among authors: wells jw. Phys Rev Lett. 2013 Nov 22;111(21):216806. doi: 10.1103/PhysRevLett.111.216806. Epub 2013 Nov 21. Phys Rev Lett. 2013. PMID: 24313515
Valley splitting in a silicon quantum device platform.
Miwa JA, Warschkow O, Carter DJ, Marks NA, Mazzola F, Simmons MY, Wells JW. Miwa JA, et al. Among authors: wells jw. Nano Lett. 2014 Mar 12;14(3):1515-9. doi: 10.1021/nl404738j. Epub 2014 Mar 3. Nano Lett. 2014. PMID: 24571617
Determining the electronic confinement of a subsurface metallic state.
Mazzola F, Edmonds MT, Høydalsvik K, Carter DJ, Marks NA, Cowie BC, Thomsen L, Miwa J, Simmons MY, Wells JW. Mazzola F, et al. Among authors: wells jw. ACS Nano. 2014 Oct 28;8(10):10223-8. doi: 10.1021/nn5045239. Epub 2014 Oct 3. ACS Nano. 2014. PMID: 25243326
In Situ Patterning of Ultrasharp Dopant Profiles in Silicon.
Cooil SP, Mazzola F, Klemm HW, Peschel G, Niu YR, Zakharov AA, Simmons MY, Schmidt T, Evans DA, Miwa JA, Wells JW. Cooil SP, et al. Among authors: wells jw. ACS Nano. 2017 Feb 28;11(2):1683-1688. doi: 10.1021/acsnano.6b07359. Epub 2017 Feb 13. ACS Nano. 2017. PMID: 28182399
Adsorbate-Induced Modification of the Confining Barriers in a Quantum Box Array.
Nowakowska S, Mazzola F, Alberti MN, Song F, Voigt T, Nowakowski J, Wäckerlin A, Wäckerlin C, Wiss J, Schweizer WB, Broszio M, Polley C, Leandersson M, Fatayer S, Ivas T, Baljozovic M, Mousavi SF, Ahsan A, Nijs T, Popova O, Zhang J, Muntwiler M, Thilgen C, Stöhr M, Pasti IA, Skorodumova NV, Diederich F, Wells J, Jung TA. Nowakowska S, et al. ACS Nano. 2018 Jan 23;12(1):768-778. doi: 10.1021/acsnano.7b07989. Epub 2018 Jan 11. ACS Nano. 2018. PMID: 29272579
Robust surface doping of Bi2Se3 by rubidium intercalation.
Bianchi M, Hatch RC, Li Z, Hofmann P, Song F, Mi J, Iversen BB, El-Fattah ZM, Löptien P, Zhou L, Khajetoorians AA, Wiebe J, Wiesendanger R, Wells JW. Bianchi M, et al. Among authors: wells jw. ACS Nano. 2012 Aug 28;6(8):7009-15. doi: 10.1021/nn3021822. Epub 2012 Aug 2. ACS Nano. 2012. PMID: 22838508
The occupied electronic structure of ultrathin boron doped diamond.
Pakpour-Tabrizi AC, Schenk AK, Holt AJU, Mahatha SK, Arnold F, Bianchi M, Jackman RB, Butler JE, Vikharev A, Miwa JA, Hofmann P, Cooil SP, Wells JW, Mazzola F. Pakpour-Tabrizi AC, et al. Among authors: wells jw. Nanoscale Adv. 2020 Feb 24;2(3):1358-1364. doi: 10.1039/c9na00593e. eCollection 2020 Mar 17. Nanoscale Adv. 2020. PMID: 36133056 Free PMC article.
225 results