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MoS2 transistors with 1-nanometer gate lengths.
Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HP, Javey A. Desai SB, et al. Among authors: wong hp. Science. 2016 Oct 7;354(6308):99-102. doi: 10.1126/science.aah4698. Epub 2016 Oct 6. Science. 2016. PMID: 27846499
Gate Quantum Capacitance Effects in Nanoscale Transistors.
Desai SB, Fahad HM, Lundberg T, Pitner G, Kim H, Chrzan D, Wong HP, Javey A. Desai SB, et al. Among authors: wong hp. Nano Lett. 2019 Oct 9;19(10):7130-7137. doi: 10.1021/acs.nanolett.9b02660. Epub 2019 Sep 23. Nano Lett. 2019. PMID: 31532995
Hysteresis-Free Carbon Nanotube Field-Effect Transistors.
Park RS, Hills G, Sohn J, Mitra S, Shulaker MM, Wong HP. Park RS, et al. Among authors: wong hp. ACS Nano. 2017 May 23;11(5):4785-4791. doi: 10.1021/acsnano.7b01164. Epub 2017 May 4. ACS Nano. 2017. PMID: 28463503
Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2.
Tang A, Kumar A, Jaikissoon M, Saraswat K, Wong HP, Pop E. Tang A, et al. Among authors: wong hp. ACS Appl Mater Interfaces. 2021 Sep 8;13(35):41866-41874. doi: 10.1021/acsami.1c06812. Epub 2021 Aug 24. ACS Appl Mater Interfaces. 2021. PMID: 34427445
110 results