A Zero-Voltage-Writing Artificial Nervous System Based on Biosensor Integrated on Ferroelectric Tunnel Junction

Adv Mater. 2024 May 18:e2404026. doi: 10.1002/adma.202404026. Online ahead of print.

Abstract

The artificial nervous system proves the great potential for the emulation of complex neural signal transduction. However, a more bionic system design for bio-signal transduction still lags behind that of physical signals, and relies on additional external sources. Here, we present a zero-voltage-writing artificial nervous system (ZANS) that integrates a bio-source-sensing device (BSSD) for ion-based sensing and power generation with a hafnium-zirconium oxide-ferroelectric tunnel junction (HZO-FTJ) for the continuously adjustable resistance state. The BSSD can use ion bio-source as both perception and energy source, and then output voltage signals varied with the change of ion concentrations to the HZO-FTJ, which completes the zero-voltage-writing neuromorphic bio-signal modulation. In view of in-/ex-vivo biocompatibility, we show the precise muscle control of a rabbit leg by integrating the ZANS with a flexible nerve stimulation electrode. The independence on external source enhances the application potential of ZANS in robotics and prosthetics. This article is protected by copyright. All rights reserved.

Keywords: artificial nervous system; biocompatibility; biosensor; ferroelectric tunnel junction; zero‐voltage‐writing.