Quantum-dot growth simulation on periodic stress of substrate

Chang Zhao; Y H Chen; C X Cui; B Xu; J Sun; W Lei; L K Lu; Z G Wang

doi:10.1063/1.2006677

Quantum-dot growth simulation on periodic stress of substrate

J Chem Phys. 2005 Sep 1;123(9):94708. doi: 10.1063/1.2006677.

Authors

Chang Zhao¹, Y H Chen, C X Cui, B Xu, J Sun, W Lei, L K Lu, Z G Wang

Affiliation

¹ Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China. czhao@red.semi.ac.cn

PMID: 16164363
DOI: 10.1063/1.2006677

Abstract

InAs quantum dots (QDs) are grown on the cleaved edge of an In(x)Ga(1-x)AsGaAs supperlattice experimentally and a good linear alignment of these QDs on the surface of an In(x)Ga(1-x)As layer has been realized. The modulation effects of periodic strain on the substrate are investigated theoretically using a kinetic Monte Carlo method. Our results show that a good alignment of QDs can be achieved when the strain energy reaches 2% of the atomic binding energy. The simulation results are in excellent qualitative agreement with our experiments.