Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As

J Fujii; B R Salles; M Sperl; S Ueda; M Kobata; K Kobayashi; Y Yamashita; P Torelli; M Utz; C S Fadley; A X Gray; J Braun; H Ebert; I Di Marco; O Eriksson; P Thunström; G H Fecher; H Stryhanyuk; E Ikenaga; J Minár; C H Back; G van der Laan; G Panaccione

doi:10.1103/PhysRevLett.111.097201

Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As

Phys Rev Lett. 2013 Aug 30;111(9):097201. doi: 10.1103/PhysRevLett.111.097201. Epub 2013 Aug 27.

Authors

Affiliation

¹ Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy.

PMID: 24033065
DOI: 10.1103/PhysRevLett.111.097201

Abstract

We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.