Layered transition-metal dichalcogenides (TMDs) are the focus of intense research owing to their semiconducting properties and applications in many fields of research. In addition to intercalation and exfoliation, physical strain modulation has been reported as a way to mechanically induce the slippage of layers and influence the properties of TMDs. In this work, we report the chemically induced slippage of layers in bulk tungsten diselenide (WSe2). Powder X-ray diffraction, Raman spectroscopy, electron microscopy, and thermal analysis suggest that slippage is easily achieved by grinding in the presence of common solvents. Chemically induced slippage of TMDs may represent an intermediate step leading to the exfoliation of these materials. We anticipate that chemical slippage will widen the synthetic utility and advance our understanding of the mechanical and optoelectronic properties of layered materials.