Carbon-rich plasma-deposited silicon oxycarbonitride films derived from 4-(trimethylsilyl)morpholine as novel single-source precursor

Evgeniya Ermakova; Irina Tsyrendorzhieva; Alexander Mareev; Dmitry Pavlov; Olga Maslova; Vladimir Shayapov; Eugene Maksimovskiy; Irina Yushina; Marina Kosinova

doi:10.1002/cplu.202400094

Carbon-rich plasma-deposited silicon oxycarbonitride films derived from 4-(trimethylsilyl)morpholine as novel single-source precursor

Chempluschem. 2024 Apr 24:e202400094. doi: 10.1002/cplu.202400094. Online ahead of print.

Authors

Evgeniya Ermakova¹, Irina Tsyrendorzhieva², Alexander Mareev², Dmitry Pavlov², Olga Maslova³, Vladimir Shayapov⁴, Eugene Maksimovskiy⁴, Irina Yushina⁴, Marina Kosinova⁵

Affiliations

¹ Nikolaev Institute of Inorganic Chemistry, Laboratory of Functional Films and Coatings, 3, Acad. Lavrentiev Ave., 630090, Novosibirsk, RUSSIAN FEDERATION.
² Irkutskij institut himii imeni A E Favorskogo SO RAN, NA, RUSSIAN FEDERATION.
³ Institut neorganičeskoj himii imeni A V Nikolaeva, NA, RUSSIAN FEDERATION.
⁴ Institut neorganiceskoj himii imeni A V Nikolaeva, NA, RUSSIAN FEDERATION.
⁵ Nikolaev Institute of Inorganic Chemistry, NA, RUSSIAN FEDERATION.

PMID: 38659085
DOI: 10.1002/cplu.202400094

Abstract

4-(trimethylsilyl)morpholine O(CH 2CH 2) 2NSi(CH3) 3 (TMSM) was investigated as a single-source precursor for SiCNO films synthesis. Optical emission spectroscopy of plasma generated from TMSM/He, TMSM/H 2, and TMSM/NH 3 gas mixtures revealed the presence of N 2, CH, H, CN, and CO species. The last two are suggested to be responsible for the lowering of carbon concentration in the films in comparison with the precursor. The refractive index ranged from 1.5 to 2.0, and bandgap varied from 2.0 to 4.6 eV, which pointed that some of the films can be used as antireflective coatings in silicon photovoltaic cell technologies and electronic devices.

Keywords: Optical emission spectroscopy; PECVD; morpholine; silicon oxycarbonitride (SiCNO) coatings.