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Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.
Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Kim YH, et al. Among authors: kim jc. Adv Mater. 2024 Apr 22:e2314274. doi: 10.1002/adma.202314274. Online ahead of print. Adv Mater. 2024. PMID: 38647521
Synaptic Barristor Based on Phase-Engineered 2D Heterostructures.
Huh W, Jang S, Lee JY, Lee D, Lee D, Lee JM, Park HG, Kim JC, Jeong HY, Wang G, Lee CH. Huh W, et al. Among authors: kim jc. Adv Mater. 2018 Aug;30(35):e1801447. doi: 10.1002/adma.201801447. Epub 2018 Jul 17. Adv Mater. 2018. PMID: 30015988
Enhanced Photoluminescence of Multiple Two-Dimensional van der Waals Heterostructures Fabricated by Layer-by-Layer Oxidation of MoS2.
Kang S, Kim YS, Jeong JH, Kwon J, Kim JH, Jung Y, Kim JC, Kim B, Bae SH, Huang PY, Hone JC, Jeong HY, Park JW, Lee CH, Lee GH. Kang S, et al. Among authors: kim b, kim jc, kim ys, kim jh. ACS Appl Mater Interfaces. 2021 Jan 13;13(1):1245-1252. doi: 10.1021/acsami.0c18364. Epub 2020 Dec 23. ACS Appl Mater Interfaces. 2021. PMID: 33356110
P-type electrical contacts for 2D transition-metal dichalcogenides.
Wang Y, Kim JC, Li Y, Ma KY, Hong S, Kim M, Shin HS, Jeong HY, Chhowalla M. Wang Y, et al. Among authors: kim m, kim jc. Nature. 2022 Oct;610(7930):61-66. doi: 10.1038/s41586-022-05134-w. Epub 2022 Aug 1. Nature. 2022. PMID: 35914677
2,477 results