Lee GH - Search Results

1

Boltzmann Switching MoS₂ Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.

Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Kim YH, et al. Among authors: lee ch, lee d, lee j, lee gh. Adv Mater. 2024 Apr 22:e2314274. doi: 10.1002/adma.202314274. Online ahead of print. Adv Mater. 2024. PMID: 38647521

2

Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J. Lee GH, et al. Among authors: lee ch, lee dy, lee c. ACS Nano. 2013 Sep 24;7(9):7931-6. doi: 10.1021/nn402954e. Epub 2013 Aug 14. ACS Nano. 2013. PMID: 23924287

3

Atomically thin p-n junctions with van der Waals heterointerfaces.

Lee CH, Lee GH, van der Zande AM, Chen W, Li Y, Han M, Cui X, Arefe G, Nuckolls C, Heinz TF, Guo J, Hone J, Kim P. Lee CH, et al. Among authors: lee gh. Nat Nanotechnol. 2014 Sep;9(9):676-81. doi: 10.1038/nnano.2014.150. Epub 2014 Aug 10. Nat Nanotechnol. 2014. PMID: 25108809

4

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

Cui X, Lee GH, Kim YD, Arefe G, Huang PY, Lee CH, Chenet DA, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen BS, Watanabe K, Taniguchi T, Muller DA, Low T, Kim P, Hone J. Cui X, et al. Among authors: lee ch, lee gh. Nat Nanotechnol. 2015 Jun;10(6):534-40. doi: 10.1038/nnano.2015.70. Epub 2015 Apr 27. Nat Nanotechnol. 2015. PMID: 25915194 Free article.

5

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

Lee GH, Cui X, Kim YD, Arefe G, Zhang X, Lee CH, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J. Lee GH, et al. Among authors: lee ch. ACS Nano. 2015 Jul 28;9(7):7019-26. doi: 10.1021/acsnano.5b01341. Epub 2015 Jun 22. ACS Nano. 2015. PMID: 26083310

6

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe₂ /MoS₂ Heterostructure for Ambipolar Field-Effect Transistors.

Lee I, Rathi S, Lim D, Li L, Park J, Lee Y, Yi KS, Dhakal KP, Kim J, Lee C, Lee GH, Kim YD, Hone J, Yun SJ, Youn DH, Kim GH. Lee I, et al. Among authors: lee y, lee gh, lee c. Adv Mater. 2016 Nov;28(43):9519-9525. doi: 10.1002/adma.201601949. Epub 2016 Sep 13. Adv Mater. 2016. PMID: 27619888

7

Epitaxially Self-Assembled Alkane Layers for Graphene Electronics.

Yu YJ, Lee GH, Choi JI, Shim YS, Lee CH, Kang SJ, Lee S, Rim KT, Flynn GW, Hone J, Kim YH, Kim P, Nuckolls C, Ahn S. Yu YJ, et al. Among authors: lee ch, lee gh, lee s. Adv Mater. 2017 Feb;29(5). doi: 10.1002/adma.201603925. Epub 2016 Dec 1. Adv Mater. 2017. PMID: 27905154

8

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

Lee JY, Shin JH, Lee GH, Lee CH. Lee JY, et al. Among authors: lee ch, lee gh. Nanomaterials (Basel). 2016 Oct 27;6(11):193. doi: 10.3390/nano6110193. Nanomaterials (Basel). 2016. PMID: 28335321 Free PMC article. Review.

9

Thickness-dependent Schottky barrier height of MoS₂ field-effect transistors.

Kwon J, Lee JY, Yu YJ, Lee CH, Cui X, Hone J, Lee GH. Kwon J, et al. Among authors: lee ch, lee jy, lee gh. Nanoscale. 2017 May 11;9(18):6151-6157. doi: 10.1039/c7nr01501a. Nanoscale. 2017. PMID: 28447707

10

Recovery of the Pristine Surface of Black Phosphorus by Water Rinsing and Its Device Application.

Kim S, Lee JY, Lee CH, Lee GH, Kim J. Kim S, et al. Among authors: lee ch, lee jy, lee gh. ACS Appl Mater Interfaces. 2017 Jun 28;9(25):21382-21389. doi: 10.1021/acsami.7b04728. Epub 2017 Jun 15. ACS Appl Mater Interfaces. 2017. PMID: 28569058

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