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Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.
Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Kim YH, et al. Among authors: so jp. Adv Mater. 2024 Apr 22:e2314274. doi: 10.1002/adma.202314274. Online ahead of print. Adv Mater. 2024. PMID: 38647521
A high-resolution strain-gauge nanolaser.
Choi JH, No YS, So JP, Lee JM, Kim KH, Hwang MS, Kwon SH, Park HG. Choi JH, et al. Among authors: so jp. Nat Commun. 2016 May 12;7:11569. doi: 10.1038/ncomms11569. Nat Commun. 2016. PMID: 27175544 Free PMC article.
Photon-triggered nanowire transistors.
Kim J, Lee HC, Kim KH, Hwang MS, Park JS, Lee JM, So JP, Choi JH, Kwon SH, Barrelet CJ, Park HG. Kim J, et al. Among authors: so jp. Nat Nanotechnol. 2017 Oct;12(10):963-968. doi: 10.1038/nnano.2017.153. Epub 2017 Aug 7. Nat Nanotechnol. 2017. PMID: 28785091
Recent advances in nanocavities and their applications.
Hwang MS, Choi JH, Jeong KY, Kim KH, Kim HR, So JP, Lee HC, Kim J, Kwon SH, Park HG. Hwang MS, et al. Among authors: so jp. Chem Commun (Camb). 2021 May 18;57(40):4875-4885. doi: 10.1039/d1cc01084k. Chem Commun (Camb). 2021. PMID: 33881425
17 results