Wang G - Search Results

1

Boltzmann Switching MoS₂ Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.

Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Kim YH, et al. Among authors: wang g. Adv Mater. 2024 Apr 22:e2314274. doi: 10.1002/adma.202314274. Online ahead of print. Adv Mater. 2024. PMID: 38647521

2

Synaptic Barristor Based on Phase-Engineered 2D Heterostructures.

Huh W, Jang S, Lee JY, Lee D, Lee D, Lee JM, Park HG, Kim JC, Jeong HY, Wang G, Lee CH. Huh W, et al. Among authors: wang g. Adv Mater. 2018 Aug;30(35):e1801447. doi: 10.1002/adma.201801447. Epub 2018 Jul 17. Adv Mater. 2018. PMID: 30015988

3

Heterosynaptic MoS₂ Memtransistors Emulating Biological Neuromodulation for Energy-Efficient Neuromorphic Electronics.

Huh W, Lee D, Jang S, Kang JH, Yoon TH, So JP, Kim YH, Kim JC, Park HG, Jeong HY, Wang G, Lee CH. Huh W, et al. Among authors: wang g. Adv Mater. 2023 Jun;35(24):e2211525. doi: 10.1002/adma.202211525. Epub 2023 Apr 28. Adv Mater. 2023. PMID: 36930856

4

Tailoring the Interfacial Band Offset by the Molecular Dipole Orientation for a Molecular Heterojunction Selector.

Eo JS, Shin J, Yang S, Jeon T, Lee J, Choi S, Lee CH, Wang G. Eo JS, et al. Among authors: wang g. Adv Sci (Weinh). 2021 Nov;8(21):e2101390. doi: 10.1002/advs.202101390. Epub 2021 Sep 9. Adv Sci (Weinh). 2021. PMID: 34499429 Free PMC article.

5

Molecular Van Der Waals Heterojunction Photodiodes Enabling Dipole-Induced Polarity Switching.

Shin J, Yang S, Eo JS, Jeon T, Lee J, Lee CH, Wang G. Shin J, et al. Among authors: wang g. Small Methods. 2022 Oct;6(10):e2200646. doi: 10.1002/smtd.202200646. Epub 2022 Sep 2. Small Methods. 2022. PMID: 36055777

6

Structurally Engineered Nanoporous Ta₂O_5-x Selector-Less Memristor for High Uniformity and Low Power Consumption.

Kwon S, Kim TW, Jang S, Lee JH, Kim ND, Ji Y, Lee CH, Tour JM, Wang G. Kwon S, et al. Among authors: wang g. ACS Appl Mater Interfaces. 2017 Oct 4;9(39):34015-34023. doi: 10.1021/acsami.7b06918. Epub 2017 Sep 19. ACS Appl Mater Interfaces. 2017. PMID: 28889746

7

Correlational Effects of the Molecular-Tilt Configuration and the Intermolecular van der Waals Interaction on the Charge Transport in the Molecular Junction.

Shin J, Gu K, Yang S, Lee CH, Lee T, Jang YH, Wang G. Shin J, et al. Among authors: wang g. Nano Lett. 2018 Jul 11;18(7):4322-4330. doi: 10.1021/acs.nanolett.8b01294. Epub 2018 Jun 25. Nano Lett. 2018. PMID: 29906125

8

Tunable rectification in a molecular heterojunction with two-dimensional semiconductors.

Shin J, Yang S, Jang Y, Eo JS, Kim TW, Lee T, Lee CH, Wang G. Shin J, et al. Among authors: wang g. Nat Commun. 2020 Mar 16;11(1):1412. doi: 10.1038/s41467-020-15144-9. Nat Commun. 2020. PMID: 32179744 Free PMC article.

9

Enhanced charge injection in pentacene field-effect transistors with graphene electrodes.

Lee S, Jo G, Kang SJ, Wang G, Choe M, Park W, Kim DY, Kahng YH, Lee T. Lee S, et al. Among authors: wang g. Adv Mater. 2011 Jan 4;23(1):100-5. doi: 10.1002/adma.201003165. Adv Mater. 2011. PMID: 21069759 No abstract available.

10

Three-dimensional integration of organic resistive memory devices.

Song S, Cho B, Kim TW, Ji Y, Jo M, Wang G, Choe M, Kahng YH, Hwang H, Lee T. Song S, et al. Among authors: wang g. Adv Mater. 2010 Nov 24;22(44):5048-52. doi: 10.1002/adma.201002575. Adv Mater. 2010. PMID: 20839254 No abstract available.

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